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 QSE773
PLASTIC SILICON PIN PHOTODIODE
PACKAGE DIMENSIONS
0.215 (5.46) 0.199 (5.06)
FEATURES
* Daylight Filter * Sidelooker Package * Pin Photodiode * Wide Reception Angle, 120 * Chip Size = .1072 inches (2.712 mm)
C L
0.311 (7.90) 0.288 (7.30) 0.126 (3.20) 0.110 (2.80)
SCHEMATIC
0.610 (15.49) MIN
ANODE CATHODE
0.060 (1.52)
0.020 (0.51) SQ. (2x) 0.100 (2.54)
0.116 (2.95) 0.100 (2.54)
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified.
1. Derate power dissipation linearly 2.50 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. Light source is an GaAs LED which has a peak emission wavelength of 940 nm. 7. All measuements made under pulse conditions.
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Reverse Voltage Power Dissipation(1)
(TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VR PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 32 150 Unit C C C C V mW
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100032A
QSE773
PLASTIC SILICON PIN PHOTODIODE
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA =25C unless otherwise specified)
MIN TYP MAX UNITS
SYMBOL
Reverse Voltage Dark Reverse Current Peak Sensitivity Reception Angle @ 1/2 Power Photo Current Capacitance Rise Time Fall Time
IR = 0.1 mA VR = 10 V VR = 5 V Ee = 1.0 mW/cm2, VCE = 5 V(6) VR = 3 V VR = 5 V, RL = 1 K VR = 5 V, RL = 1 K
VR IR(D) !PK " IPH C tr tf
32 -- 920 +/-60 30 20 50 50
-- 30
V nA nm Degrees
--
A pF ns ns
TYPICAL PERFORMANCE CURVES
1.0 S (!)rel - RELATIVE SPECTRAL SENSITIVITY
120 Wavelength = 940 nm TA = 25C
ISC - SHORT CIRCUIR CURRENT 800 900 1000 1100
0.8
100
80
0.6
60
0.4
40
0.2
20 0 700 0 0 !#- WAVELENGTH (nm) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Ee - IRRADIANCE (mW/cm2)
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
Fig. 2 Short Circuit Current vs. Irradiance
2 of 3
100032A
QSE773
PLASTIC SILICON PIN PHOTODIODE
100 f = 1 MHz E=0
1000 VR = 10 V E=0 IR - DARK CURRENT (nA) 0.1 1 VR - REVERSE VOLTAGE (V) 10 100 100
80 CAPACITANCE (pF)
60
40
10
20
0 0.01
1 0 10 20 30 40 50 60 70 80 90 100
TA -TEMPERATURE (C)
Fig. 3 Capacitance vs. Reverse Voltage
Fig. 4 Dark Current vs. Temperature
1200 E=0 IR -DARK CURRENT (pA) 1000
800
600
400
200
0 0 2 4 6 8 10 12 14 16 18 20
VR - REVERSE VOLTAGE (V)
Fig. 5 Dark Current vs. Reverse Voltage
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100032A


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